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Россия нарастила до максимума вывоз одного лакомства08:43
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Storing Data: To write data, a high voltage (around 15-20V) is applied to the control gate above the floating gate. This causes electrons from the transistor’s channel (the substrate) to “tunnel” through the thin oxide barrier via a quantum mechanical process called Fowler-Nordheim tunneling. The electrons get trapped in the floating gate, creating a negative charge. The presence and amount of this charge shift the cell’s threshold voltage—the voltage needed to turn the transistor on during a read operation.，推荐阅读爱思助手下载最新版本获取更多信息
NG and W3C XML Schema.。关于这个话题，雷电模拟器官方版本下载提供了深入分析
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